to-126c plastic-encapsulate transistors b772 transis tor ( pnp ) fea tures low speed switching maximum ratings(t a =25 unless otherwise noted ) symbol para m eter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -6 v i c collector current -continuous -3 a p c collector dissipation 1.25 w t j , t stg junction and storage temperature -55~+150 electrical chara c teristics ( ta=25 unless other w ise specifie d ) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br) cbo ic=-100 a , i e =0 -40 v collector-emitter breakdown voltage v (br) ceo i c = -10 ma , i b =0 -30 v emitter-base breakdown voltage v (br) ebo i e = -100 a , i c =0 -6 v collector cut-off current i cbo v cb = -40v , i e =0 -1 a collector cut-off current i ceo v ce =-30v , i b =0 -10 a emitter cut-off current i ebo v eb =-6v ,i c =0 -1 a h fe (1) v ce = -2v, i c = -1a 60 400 dc current gain h fe (2) v ce =-2v, i c = -100ma 32 collector-emitter saturation voltage v ce (sat) i c =-2a,i b = -0.2a -0.5 v base-emitter saturation voltage v be (sat) i c =-2a,i b = -0.2a -1.5 v transition frequency f t v ce =-5v, i c =-0.1a f= 10mhz 50 mhz classification of h fe (1) rank r o y gr range 60-120 100- 2 00 160-320 200-400 to- 126c 1. base 2. collector 3. emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,aug,2012
0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 -10 -100 1 10 100 -1 -10 -100 -1000 10 100 1000 -0 -3 -6 -9 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -1 -10 -100 -1000 -1 -10 -100 -1000 1 10 100 1000 -10 -100 -1000 -0.1 -1 -10 10 100 1000 -0 -200 -400 -600 -800 -1000 -1200 -1 -10 -100 -1000 collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a -5 500 collector current i c (ma) transition frequency f t (mhz) v ce =-5v t a =25 o c i c f t ?? -3000 -20 3000 common emitter v ce = -2v -3000 -3000 -3000 dc current gain h fe collector current i c (ma) t a =25 o c t a =100 i c h fe ?? -3000 collector current i c (a) collector-emitter voltage v ce (v) static characteristic i b =-1ma -2ma -3ma -4ma -5ma -6ma -7ma -8ma -9ma -10ma common emitter t a =25 =10 t a =25 t a =100 v cesat ?? i c collector current i c (ma) collector-emitter saturation voltage v cesat (mv) - - - - =10 collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =100 t a =25 i c v besat ?? c ob c ib f=1mhz i e =0 / i c =0 t a =25 o c v cb / v eb c ob / c ib ?? reverse voltage v (v) capacitance c (pf) b772 t a = 2 5 o c t a = 1 0 0 o c common emitter v ce = -2v collector current i c (ma) base-emitter voltage v be (mv) v be ?? i c 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,aug,2012
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